Method to reduce charge buildup during high aspect ratio...

Details Method to reduce charge buildup during high aspect ratio... Method to reduce charge buildup during high aspect ratio...

2005-08-26

2008-03-18

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S709000, C438S906000, C257SE21585

Reexamination Certificate

active

07344975

ABSTRACT:
A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

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Soda et al.; On-Wafer Monitoring of Electrical Conductivity of Sidewall-deposited Polymer in SiO2 Etching Processes; 2 pgs.
Watanabe et al; Reduction of Microtrenching and Island Formation in Oxide Plasma Etching by Employing Electron Beam Charge Neutralization; Applied Physics Letters; Oct. 22, 2001; pp. 2698-2700; vol. 79, No. 17; American Institute of Physics; USA.

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