Method to reduce boron penetration in a SiGe bipolar device

Details Method to reduce boron penetration in a SiGe bipolar device Method to reduce boron penetration in a SiGe bipolar device

2007-03-30

2008-11-25

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S207000, C438S361000, C257SE29193

Reexamination Certificate

active

07456061

ABSTRACT:
The invention, in one aspect, provides a method of manufacturing a semiconductor device. This aspect includes forming gate electrodes in a non-bipolar transistor region of a semiconductor substrate, placing a polysilicon layer over the gate electrodes in the non-bipolar transistor region and over the semiconductor substrate within a bipolar transistor region. A protective layer is formed over the polysilicon layer. The protective layer has a weight percent of hydrogen that is less than about 9% and is selective to silicon germanium (SiGe), such that SiGe does not form on the protective layer. This aspect further includes forming emitters for bipolar transistors in the bipolar transistor region, including forming a SiGe layer under a portion of the polysilicon layer.

REFERENCES:
patent: 2005/0079691 (2005-04-01), Kim et al.

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