Method to provide a triple well in an epitaxially based CMOS...

Details Method to provide a triple well in an epitaxially based CMOS... Method to provide a triple well in an epitaxially based CMOS...

2006-03-07

2006-03-07

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S228000, C438S202000

Reexamination Certificate

active

07008836

ABSTRACT:
A method to provide a triple well in an epitaxially based CMOS or B:CMOS process comprises the step of implanting the triple well prior to the epitaxial deposition.

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