Method to protect internal components of semiconductor...

Details Method to protect internal components of semiconductor... Method to protect internal components of semiconductor...

2006-10-10

2006-10-10

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C118S719000, C257SE21092

Reexamination Certificate

active

07119032

ABSTRACT:
This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

REFERENCES:
patent: 5201990 (1993-04-01), Chang et al.
patent: 5688565 (1997-11-01), McMillan et al.
patent: 5831277 (1998-11-01), Razeghi
patent: 5873977 (1999-02-01), Desu et al.
patent: 6056994 (2000-05-01), Paz de Araujo et al.
patent: 6095084 (2000-08-01), Shamouilian et al.
patent: 6307221 (2001-10-01), Danzilio
patent: 6533910 (2003-03-01), O'Donnell et al.
patent: 6537429 (2003-03-01), O'Donnell et al.
patent: 6613442 (2003-09-01), O'Donnell et al.
patent: 2001/0003271 (2001-06-01), Otsuki
patent: 2002/0036064 (2002-03-01), DeOmellas et al.
patent: 2002/0043215 (2002-04-01), Yoshioka et al.
patent: 2002/0195056 (2002-12-01), Sandhu et al.
patent: 2003/0159657 (2003-08-01), Kaushal et al.
patent: 2003/0162371 (2003-08-01), Udagawa et al.
patent: 2003/0185997 (2003-10-01), Hsieh
patent: 2003/0200929 (2003-10-01), Otsuki
patent: 2003/0219605 (2003-11-01), Molian et al.
patent: 2003/0226840 (2003-12-01), Dalton
patent: 2004/0168637 (2004-09-01), Gorokhovsky
patent: 2005/0100748 (2005-05-01), Cook et al.
patent: 1 026 281 (2000-08-01), None
patent: 1191582 (2002-03-01), None
patent: WO 99/20812 (1999-04-01), None
patent: WO 02/053794 (2002-07-01), None
patent: WO 02/053797 (2002-07-01), None
patent: WO 02/053799 (2002-07-01), None
patent: WO 02/054454 (2002-07-01), None
patent: WO 02/057506 (2002-07-01), None
patent: WO 02/079538 (2002-10-01), None
patent: WO 03/001559 (2003-01-01), None
patent: WO 03/080892 (2003-10-01), None
XP000768900; Deornellas S P, et al.; “Etching New IC Materials for Memory Devices”; Solid State Technology, Penwell Corp., Tulsa, OK; vol. 41, No. 8, Aug. 1998; pp. 53-44, 56, 58.
XP002382346 & RU 2100067 C1; Database WPI; Section Ch, Week 199835; Derwent Publications Ltd., London, GB; Class HO6, AN 1998-411884; As Sibe Catalysis Inst; Dec. 24, 1997.
Hovsepian P.E., et al; “Recent Progress in Large-Scale Production of Nanoscale Multilayer/Superlattice Hard Coatings”; Vacuum, Pergamon Press, GB; vol. 69, No. 1-3; Dec. 24, 2003, pp. 27-36.
XP002383823; Database Inspec (Online) The Institution of Electrical Engineers, Stevenage, GB; Mar. 30, 2000; Ledermann, N., et al.; “Sputtered Silicon Carbide Thin Films as Protective Coating for MEMS Applications”.

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