Method to produce localized halo for MOS transistor

Details Method to produce localized halo for MOS transistor Method to produce localized halo for MOS transistor

2006-06-20

2006-06-20

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000

Reexamination Certificate

active

07064039

ABSTRACT:
Methods are discussed for forming a localized halo structure and a retrograde profile in a substrate of a semiconductor device. The method comprises providing a gate structure over the semiconductor substrate, wherein a dopant material is implanted at an angle around the gate structure to form a halo structure in a source/drain region of the substrate and underlying a portion of the gate structure. A trench is formed in the source/drain region of the semiconductor substrate thereby removing at least a portion of the halo structure in the source/drain region. A silicon material layer is then formed in the trench using an epitaxial deposition.

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Scott Thompson et al., “MOS Scaling: Transistor Challenges for the 21stCentury” Intel Technology Journal, Third Quarter, 1998, pp. 1-19.

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