Method to produce highly doped polysilicon thin films

Details Method to produce highly doped polysilicon thin films Method to produce highly doped polysilicon thin films

2006-11-21

2006-11-21

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

07138307

ABSTRACT:
The present invention describes a method of forming a highly doped polysilicon film. According to an embodiment of the present invention, a first silicon film is formed on a substrate. The first silicon film is then doped. Next, a second silicon film is formed on the doped first silicon film. The second silicon film is then doped.

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