Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-11
2005-01-11
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C438S532000, C438S592000, C438S659000
Reexamination Certificate
active
06841441
ABSTRACT:
A method of fabricating first and second gates comprising the following steps. A substrate having a gate dielectric layer formed thereover is provided. The substrate having a first gate region and a second gate region. A thin first gate layer is formed over the gate dielectric layer. The thin first gate layer within the second gate region is masked to expose a portion of the thin first gate layer within the first gate region. The exposed portion of the thin first gate layer is converted to a thin third gate layer portion. A second gate layer is formed over the thin first and third gate layer portions. The second gate layer and the first and third gate layer portions are patterned to form a first gate within first gate region and a second gate within second gate region.
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Ang Chew Hoe
Cha Randall Cher Liang
Lim Eng-Hua
Quek Elgin
Yen Daniel
Chartered Semiconductor Manufacturing Ltd.
Chaudhari Chandra
Rosemary L. S. Pike
Saile George O
Shanton Stephen G.
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