Method to prevent pattern collapse in features etched in...

Details Method to prevent pattern collapse in features etched in... Method to prevent pattern collapse in features etched in...

2005-02-01

2005-02-01

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S311000, C430S313000, C430S314000, C430S316000, C438S710000, C216S067000

Reexamination Certificate

active

06849389

ABSTRACT:
Disclosed is an in-situ process that prevents pattern collapse from occurring after they have been etched in S02-containing plasmas. The developed process involving treating the etched wafer to another plasma comprising of a chemically reducing gas such as H2. This treatment chemically reduces the hygroscopic sulfites/sulfates left on the surface after the main etch step. The lower sulfite/sulfate concentration on the wafer translates into considerably less moisture pick up and prevents high aspect ratio feature collapse.

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Pattern Collapse in the Top Surface Imaging Process After Dry Development; Shigeyasu Mori, et al.; J. Vac. Sci. Technol. B 16(6); pp. 3744-3747 (Nov./Dec. 1998).

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