Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-08
2008-07-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S592000, C438S595000, C257SE29161, C257SE21199
Reexamination Certificate
active
07396716
ABSTRACT:
The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a capping layer610over gate structures230located over a microelectronics substrate210wherein the gate structures230include sidewall spacers515and have a doped region525located between them. A protective layer710is placed over the capping layer610and the doped region525, and a portion of the protective layer710and capping layer610that are located over the gate structures are removed to expose a top surface of the gate structures230. A remaining portion of the protective layer710and capping layer610remains over the doped region525. With the top surface of the gate structures230exposed, metal is incorporated into the gate structures to form gate electrodes230.
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Mehrad Freidoon
Tran Joe G.
Yu Shaofeng
Brady III W. James
Fourson George
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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