Method to obtain fully silicided gate electrodes

Details Method to obtain fully silicided gate electrodes Method to obtain fully silicided gate electrodes

2007-07-17

2007-07-17

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S195000, C438S196000, C438S176000, C438S181000, C438S184000, C438S217000, C438S257000, C438S267000, C438S585000, C438S595000, C438S265000, C438S514000, C438S630000, C438S721000, C438S780000, C257SE21626, C257SE21575, C257SE21242

Reexamination Certificate

active

11228902

ABSTRACT:
The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises depositing a protective layer (510) over a spacer material (415) located over gate electrodes (250) and a doped region (255) located between the gate electrodes (250), removing a portion of the spacer material (415) and the protective layer (510) located over the gate electrodes (250). A remaining portion of the spacer material (415) remains over the top surface of the gate electrodes (250) and over the doped region (255), and a portion of the protective layer (510) remains over the doped region (255). The method further comprises removing the remaining portion of the spacer material (415) to form spacer sidewalls on the gate electrodes (250), expose the top surface of the gate electrodes (250), and leave a remnant of the spacer material (415) over the doped region (255). Source/drains are formed adjacent the gate electrodes250and through the remnant of the spacer material (415), and a metal is incorporated into the gate electrodes (250).

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