Method to monitor the kink effect

Details Method to monitor the kink effect Method to monitor the kink effect

1999-08-12

2000-04-04

Bowers, Charles

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

G01R 3126, H01L 2166

Patent

active

060460628

ABSTRACT:
This invention relates to the characterization of integrated circuit devices and more particularly to an improved method for monitoring for unacceptable kink behavior, in the threshold voltage characteristics of FET devices, that can be caused by a tendency for reduced gate oxide thickness and reduced substrate doping concentration, along the length of channel regions bounded by STI. This is achieved by comparing a pair of drain current versus gate voltage characteristics, as a function of two values of substrate voltage. Relative voltage shifts between the two curves are compared at a value of drain current that is well below the kink and at a value of drain current that is well above the kink. The quantitative degree of kink behavior is determined by how much greater the voltage shift, corresponding to the value of drain current well above the kink, exceeds the voltage shift, corresponding to the value of drain current well below the kink.

REFERENCES:
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 5185280 (1993-02-01), Houston et al.
patent: 5489792 (1996-02-01), Hu et al.

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