Method to modulate coverage of barrier and seed layer using...

Details Method to modulate coverage of barrier and seed layer using... Method to modulate coverage of barrier and seed layer using...

2008-10-23

2010-11-09

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S628000, C257SE21584

Reexamination Certificate

active

07829456

ABSTRACT:
Methods for processing substrates are provided herein. In some embodiments, a method for processing substrates includes providing to a process chamber a substrate comprising an exposed dielectric layer having a feature formed therein. A mask layer comprising titanium nitride may be selectively deposited atop corners of the feature. A barrier layer may be selectively deposited atop the mask layer and into a bottom portion of the feature. The barrier layer deposited on the bottom portion of the feature may be etched to redistribute at least a portion of the barrier layer onto sidewalls of the feature.

REFERENCES:
patent: 2002/0142583 (2002-10-01), Chopra

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