Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-05-21
2010-12-14
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S780000, C257SE21256, C257SE21257
Reexamination Certificate
active
07851384
ABSTRACT:
Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.
REFERENCES:
patent: 5003178 (1991-03-01), Livesay
patent: 6054379 (2000-04-01), Yau et al.
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6582777 (2003-06-01), Ross et al.
patent: 6790788 (2004-09-01), Li et al.
patent: 7060330 (2006-06-01), Zheng et al.
patent: 7091137 (2006-08-01), Lee et al.
patent: 2003/0186168 (2003-10-01), Gallagher et al.
patent: 2003/0194495 (2003-10-01), Li et al.
patent: 2004/0067308 (2004-04-01), Zheng et al.
patent: 2005/0250346 (2005-11-01), Schmitt
Liu Yijun
M'Saad Hichem
Peterson Chad
Xia Li-Qun
Xu Huiwen
Applied Materials Inc.
Landau Matthew C
McCall-Shepard Sonya D
Patterson & Sheridan LLP
LandOfFree
Method to mitigate impact of UV and E-beam exposure on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to mitigate impact of UV and E-beam exposure on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to mitigate impact of UV and E-beam exposure on... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4218849