Method to minimize formation of recess at surface planarized...

Details Method to minimize formation of recess at surface planarized... Method to minimize formation of recess at surface planarized...

2007-07-03

2007-07-03

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S645000, C438S618000, C438S692000

Reexamination Certificate

active

11237169

ABSTRACT:
When chemical mechanical planarization (CMP) is used to planarize a surface coexposing patterned features and dielectric fill, where patterned features and the fill are formed of materials having very different CMP removal rates or characteristics, the planarized surface may have excessively rough, dishing or recessing may take place, or one or more or the materials may be damaged. In structures in which planarity is important, these problems can be prevented by forming a capping layer on the patterned features, wherein the CMP removal rate of the material forming the capping layer is similar to the CMP removal rate of the dielectric fill.

REFERENCES:
patent: 5700737 (1997-12-01), Yu et al.
patent: 6611453 (2003-08-01), Ning

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