Method to manufacture split gate with high density plasma...

Details Method to manufacture split gate with high density plasma... Method to manufacture split gate with high density plasma...

2009-10-16

2011-11-08

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21410, C257SE21419

Reexamination Certificate

active

08053315

ABSTRACT:
This invention discloses a method of manufacturing a trenched semiconductor power device with split gate filling a trench opened in a semiconductor substrate wherein the split gate is separated by an inter-poly insulation layer disposed between a top and a bottom gate segments. The method further includes a step of forming the inter-poly layer by applying a RTP process after a HDP oxide deposition process to bring an etch rate of the HDP oxide layer close to an etch rate of a thermal oxide.

REFERENCES:
patent: 6787409 (2004-09-01), Ji et al.
patent: 2005/0145934 (2005-07-01), Kocon et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2006/0246666 (2006-11-01), Han et al.
patent: 2010/0148300 (2010-06-01), Zhou

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