Method to manufacture silicon quantum islands and...

Details Method to manufacture silicon quantum islands and... Method to manufacture silicon quantum islands and...

2006-10-17

2006-10-17

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S009000

Reexamination Certificate

active

07122413

ABSTRACT:
The present invention provides a method of manufacturing a single-electron transistor device (100). The method includes forming a thinned region (110) in a silicon substrate (105), the thinned region (110) offset by a non-selected region (115). The method also includes forming at least one quantum island (145) from the thinned region (110) by subjecting the thinned region (110) to an annealing process. The non-selected region (115) is aligned with the quantum island (145) and tunnel junctions (147) are formed between the quantum island (145) and the non-selected region (115). The present invention also includes a single-electron device (200), and a method of manufacturing an integrated circuit (300) that includes a single-electron device (305).

REFERENCES:
patent: 4788160 (1988-11-01), Havemann et al.
patent: 5731598 (1998-03-01), Kado et al.
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6444545 (2002-09-01), Sadd et al.
patent: 6524883 (2003-02-01), Kim

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