Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-10
2011-05-10
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S009000, C257SE21090, C257SE29170, C257SE21404, C438S962000
Reexamination Certificate
active
07939398
ABSTRACT:
A method of manufacturing a single-electron transistor device is provided. The method includes forming a thinned region in a silicon substrate, the thinned region offset by a non-selected region. The method also includes forming at least one quantum island from the thinned region by subjecting the thinned region to an annealing process. The non-selected region is aligned with the quantum island and tunnel junctions are formed between the quantum island and the non-selected region. The present invention also includes a single-electron device, and a method of manufacturing an integrated circuit that includes a single-electron device.
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Barna Gabriel G.
Faynot Olivier A.
Wasshuber Christoph
Brady III Wade J.
Patti John J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Vu David
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