Method to manufacture dual damascene using a phantom implant mas

Details Method to manufacture dual damascene using a phantom implant mas Method to manufacture dual damascene using a phantom implant mas

1998-08-19

1999-11-16

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438700, 438634, H01L 214763

Patent

active

059857536

ABSTRACT:
Methods of manufacturing semiconductor devices wherein a selected layer is implanted with heavy ions in a pattern having dimensions of a via structure to be formed in a first layer of interlayer dielectric. In a first embodiment, the ions are implanted in an etch stop layer formed between a first and second layer of interlayer dielectric. In a second embodiment, the ions are implanted in the second layer of interlayer dielectric. Selective etch processes form a trench structure in the second layer of interlayer dielectric and form a via structure in the first layer of interlayer dielectric. The via structure and trench structure are filled with a conductive material.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5354711 (1994-10-01), Heiztmann et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5783485 (1998-07-01), Ong et al.
patent: 5858877 (1999-01-01), Dennison et al.
patent: 5869395 (1999-02-01), Yim
patent: 5882996 (1999-03-01), Dai
patent: 5897369 (1999-04-01), Jun

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