Method to manufacture a capacitor with crown-shape using edge co

Details Method to manufacture a capacitor with crown-shape using edge co Method to manufacture a capacitor with crown-shape using edge co

1999-04-06

2000-10-31

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, H01L 218242

Patent

active

061401781

ABSTRACT:
The present invention provides a method to manufacture a capacitor on a memory device. The capacitor formed on the memory device will only edge contacted with the related region, so a symmetrical formation of the capacitor to the related region of the memory device is not necessary, the manufacturing processes are therefore simplified to save the cost.

REFERENCES:
patent: 5488011 (1996-01-01), Figura et al.
patent: 5858837 (1999-01-01), Sakoh et al.
patent: 5953608 (1999-09-01), Hirota
patent: 5994181 (1999-11-01), Hsieh et al.

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