Method to make nano structure below 25 nanometer with high...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C977S789000

Reexamination Certificate

active

10987743

ABSTRACT:
A method of making a nano structure smaller than 25 nanometers utilizing atomic layer deposition, planarizing, and etching techniques.

REFERENCES:
patent: 4781689 (1988-11-01), Sealfon et al.
patent: 5189501 (1993-02-01), Kawamura et al.
patent: 5336634 (1994-08-01), Katayama et al.
patent: 5877065 (1999-03-01), Yallup
patent: 6255194 (2001-07-01), Hong
patent: 6504210 (2003-01-01), Divakaruni et al.
patent: 6528412 (2003-03-01), Wang et al.
patent: 6579809 (2003-06-01), Yang et al.
patent: 6593065 (2003-07-01), Scherer
patent: 6653181 (2003-11-01), Hergenrother et al.
patent: 6664156 (2003-12-01), Ang et al.
patent: 6686271 (2004-02-01), Raaijmakers et al.
patent: 6699783 (2004-03-01), Raaijmakers et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6767788 (2004-07-01), Kim
patent: 6914316 (2005-07-01), Yun et al.
patent: 2003/0015764 (2003-01-01), Raaijmakers et al.
patent: 2003/0049375 (2003-03-01), Nguyen et al.
patent: 2005/0208752 (2005-09-01), Colburn et al.
Ge Yi and Walther Schwarzacher, Single crystal superconductor nanowires by electrodeposition, Mar. 22, 1999, pp. 1746-1748, vol. 74, No. 12.
P.R. Evans, G. Yi, and W. Schwarzacher, Current perpendicular to plane giant magnetoresistance of multilayered nanowires electrodeposited in anodic aluminum oxide membranes, Jan. 24, 2000, pp. 481-483, vol. 76, No. 4.

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