Method to make minimal spacing between floating gates in...

Details Method to make minimal spacing between floating gates in... Method to make minimal spacing between floating gates in...

2005-04-19

2005-04-19

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S593000

Reexamination Certificate

active

06881629

ABSTRACT:
A new method to form MOS gates in an integrated circuit device is achieved. The method is particularly useful for forming floating gates in split gate flash transistors. The method comprises providing a substrate. A dielectric layer is formed overlying the substrate. A conductor layer is formed overlying the dielectric layer. A first masking layer is deposited overlying the conductor layer. The first masking layer is patterned to selectively expose the conductor layer. A second masking layer is deposited overlying the first masking layer and the conductor layer. The second masking layer is etched back to form spacers on sidewalls of the first masking layer. The conductor layer is etched through where exposed by the first masking layer and the spacers to thereby form MOS gates in the manufacture of the integrated circuit device.

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