Method to make corner cross-grid structures in copper...

Details Method to make corner cross-grid structures in copper... Method to make corner cross-grid structures in copper...

2008-01-01

2008-01-01

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S113000, C438S637000, C438S926000, C257S048000, C257SE21575, C257S620000

Reexamination Certificate

active

07314811

ABSTRACT:
A new method to prevent cracking at the corners of a semiconductor die during dicing is described. Dummy metal structures are fabricated at the corners of the die to prevent cracking. The design for the dummy metal structures can be generated automatically by a computer program.

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