Method to lower work function of gate electrode through Ge...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S283000, C438S301000, C438S303000, C438S652000

Reexamination Certificate

active

07101746

ABSTRACT:
A method for forming selective P type and N type gates is described. A gate oxide layer is grown overlying a semiconductor substrate. A polysilicon layer is deposited overlying the gate oxide layer. Germanium ions are implanted into a portion of the polysilicon layer not covered by a mask to form a polysilicon-germanium layer. The polysilicon layer and the polysilicon-germanium layer are patterned to form NMOS polysilicon gates and PMOS polysilicon-germanium gates. In an alternative, nitrogen ions are implanted into the polysilicon-germanium layer and the gates are annealed after patterning to redistribute the germanium ions throughout the polysilicon-germanium layer. In a second alternative, germanium ions are implanted into a first thin polysilicon layer, then a second polysilicon layer is deposited to achieve the total polysilicon layer thickness before patterning the gates.

REFERENCES:
patent: 5356821 (1994-10-01), Naruse et al.
patent: 5918116 (1999-06-01), Chittipeddi
patent: 6063670 (2000-05-01), Lin et al.
patent: 6342438 (2002-01-01), Yu et al.
patent: 6376323 (2002-04-01), Kim et al.
patent: 6468888 (2002-10-01), Yu
patent: 6872608 (2005-03-01), Chan et al.
patent: 2001/0023116 (2001-09-01), Wurzer et al.
patent: 2004/0099916 (2004-05-01), Rotondaro et al.
Co-pending U.S. Appl. No. 10/697,746, filed on Oct. 30, 2003 to T. H. Chan.
Co-pending U.S. Appl. No. 10/266,425, filed on Oct. 8, 2002 to Chew-Hoe Ang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method to lower work function of gate electrode through Ge... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to lower work function of gate electrode through Ge..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to lower work function of gate electrode through Ge... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3589373

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.