Method to increase cracking threshold for low-k materials

Details Method to increase cracking threshold for low-k materials Method to increase cracking threshold for low-k materials

2005-03-15

2005-03-15

Lebentritt, Michael S. (Department: 2824)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S703000, C438S782000, C438S787000

Reexamination Certificate

active

06867126

ABSTRACT:
A method of increasing the cracking threshold of a low-k material layer comprising the following steps. A substrate having a low-k material layer formed thereover is provided. The low-k material layer having a cracking threshold. The low-k material layer is plasma treated to increase the low-k material layer cracking threshold. The plasma treatment including a gas that is CO2, He, NH3or combinations thereof.

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