Method to improve uniformity and the critical dimensions of a DR

Details Method to improve uniformity and the critical dimensions of a DR Method to improve uniformity and the critical dimensions of a DR

1999-05-27

1999-12-21

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438592, 438952, H01L 21336

Patent

active

060048530

ABSTRACT:
A process for fabricating a straight walled, silicon nitride capped, gate structure, for a MOSFET device, has been developed. The process features the creation of a straight walled, photoresist shape, to be used as an etch mask, during the patterning of the straight walled, silicon nitride capped, gate structure. A silicon oxynitride layer, with a specific thickness range between about 820 to 920 Angstroms, is used as a bottom anti-reflective coating, (BARC), layer, located between an overlying straight walled, photoresist shape, and an underlying silicon nitride capping layer. The BARC layer retards the reflection emitted from a silicon nitride capping layer, during the photolithographic exposure procedure, used for definition of the straight walled, photoresist shape, allowing the desired straight walled, photoresist shape, to be obtained, independent of the thickness of the silicon nitride capping layer. The ability to fabricate straight walled, silicon nitride capped, gate structures, allows control, and uniformity, of channel regions, located underlying the straight walled, silicon nitride capped, gate structure, and between source/drain regions, self-aligned to the straight walled, silicon nitride capped, gate structures, to be realized.

REFERENCES:
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5907781 (1999-05-01), Chen et al.
patent: 5937319 (1999-08-01), Xiang et al.

Affiliated with

Also associated with

Rating

Method to improve uniformity and the critical dimensions of a DR does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to improve uniformity and the critical dimensions of a DR, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to improve uniformity and the critical dimensions of a DR will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504471