Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-02-22
2011-02-22
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21409, C257SE21632
Reexamination Certificate
active
07892930
ABSTRACT:
A method of forming a transistor device is provided wherein a gate structure is formed over a semiconductor body of a first conductivity type. The gate structure is formed comprising a protective cap thereover and defining source/drain regions laterally adjacent thereto. A first implant is performed of a second conductivity type into both the gate structure and the source/drain regions. The semiconductor body is etched to form recesses substantially aligned to the gate structure wherein the first implant is removed from the source/drain regions. Source/drain regions are implanted or grown by a selective epitaxial growth.
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Ekbote Shashank S.
Obradovic Borna
Brady III Wade J.
Dickey Thomas L
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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