Method to improve transistor Tox using high-angle implants...

Details Method to improve transistor Tox using high-angle implants... Method to improve transistor Tox using high-angle implants...

2007-07-27

2010-06-01

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C438S286000, C438S300000, C438S303000, C438S305000, C257SE21039, C257SE21041, C257SE21345, C257SE21629, C257SE29040, C257SE29013, C257SE29054, C257SE29262, C257SE21346

Reexamination Certificate

active

07727838

ABSTRACT:
A method of forming an integrated circuit includes forming a gate structure over a semiconductor body, and forming a shadowing structure over the semiconductor body laterally spaced from the gate structure, thereby defining an active area in the semiconductor body therebetween. The method further includes performing an angled implant into the gate structure, wherein the shadowing structure substantially blocks dopant from the angled implant from implanting into the active area, and performing a source/drain implant into the gate structure and the active area.

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