Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-01-30
2009-10-13
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S790000, C257SE21240, C257SE21567
Reexamination Certificate
active
07601651
ABSTRACT:
A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.
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Balseanu Mihaela
M'Saad Hichem
Shek Mei-yee
Xia Li-Qun
Applied Materials Inc.
Ghyka Alexander G
Nikmanesh Seahvosh J
Patterson & Sheridan LLP
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