Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-07
2008-09-23
Toledo, Fernando L (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S647000, C438S652000
Reexamination Certificate
active
07427543
ABSTRACT:
The present invention provides source/drain electrode100for a transistor105. The source/drain electrode100comprises a plurality of polysilicon grains100located over a source/drain region115. A metal salicide layer120conformally coats the plurality of polysilicon grains. The present invention also includes a method of fabricating the above described source/drain electrode200, and integrated circuit800have includes a semiconductor device805having the described source/drain electrodes810.
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Mansoori Majid M.
Wasshuber Christoph A.
Brady III Wade J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Toledo Fernando L
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