Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-01
2009-06-09
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S633000, C438S687000, C438S691000, C438S692000, C257SE21495
Reexamination Certificate
active
07544606
ABSTRACT:
A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.
REFERENCES:
patent: 5186718 (1993-02-01), Tepman et al.
patent: 7273808 (2007-09-01), Lin
patent: 7375024 (2008-05-01), Park
patent: 2003/0089928 (2003-05-01), Saito et al.
patent: 2004/0012090 (2004-01-01), Basol et al.
patent: 2004/0014312 (2004-01-01), Kunishima et al.
patent: 2005/0042873 (2005-02-01), Uzoh et al.
Murakami, H., et al., “Spin-on Cu Films for Ultralarge Scale Integrated Metallization,” J. Vac. Sci. Technol. B 17(5), Sep./Oct. 1999, pp. 2321-2324.
Pallinti, J., et al., “An Overview of Stress Free Polishing of Cu with Ultra Low-k (k<2.0) Films,” Interconnect Technology Conference, 2003 International Proceedings of the IEEE, 3 pages.
Lo Henry
Tseng Joshua
Wang Jean
Yang Chia-Ming
Nguyen Thanh
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Method to implement stress free polishing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to implement stress free polishing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to implement stress free polishing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4075536