Method to grow self-aligned silicon on a poly-gate, source and d

Details Method to grow self-aligned silicon on a poly-gate, source and d Method to grow self-aligned silicon on a poly-gate, source and d

1998-03-26

1999-12-07

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438303, 438299, 438592, 438630, 438649, 438647, 438651, 438655, 438657, 438664, 438682, 438684, H01L 21283

Patent

active

059982861

ABSTRACT:
The method of the present invention includes forming a MOS on a semiconductor substrate. Subsequently, a silicon-rich metal silicide layer is deposited on the MOS and substrate by using chemical vapor deposition to act as a silicon material source. Then, a thermal process is carried out to separate a portion of the silicon out of the metal silicide layer, thereby forming a silicon layer on top of the gate of the MOS, source/drain. The nest step is to remove the metal suicide layer. A self-aligned metal silicide layer is formed on the silicon layer.

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