Method to form Si-containing SOI and underlying substrate...

Details Method to form Si-containing SOI and underlying substrate... Method to form Si-containing SOI and underlying substrate...

2006-11-28

2006-11-28

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S142000, C438S166000

Reexamination Certificate

active

07141457

ABSTRACT:
A method of forming a hybrid SOI substrate comprising an upper Si-containing layer and a lower Si-containing layer, wherein the upper Si-containing layer and the lower Si-containing layer have different crystallographic orientations. In accordance with the present invention, the buried insulating region may be located within one of the Si-containing layers or through an interface located between the two Si-containing layers.

REFERENCES:
patent: 2005/0280121 (2005-12-01), Doris et al.

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