Method to form relaxed SiGe layer with high Ge content using...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma

Reexamination Certificate

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C438S475000, C438S933000, C438S663000, C257SE21120, C257SE21129, C257SE21218, C257SE21319

Reexamination Certificate

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10936400

ABSTRACT:
A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions selected from the group of ions consisting of boron and helium, and which further includes implanting H+ ions; annealing to relax the strained SiGe layer, thereby forming a first relaxed SiGe layer; and completing the semiconductor device.

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