Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2007-07-10
2007-07-10
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S475000, C438S933000, C438S663000, C257SE21120, C257SE21129, C257SE21218, C257SE21319
Reexamination Certificate
active
10936400
ABSTRACT:
A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions selected from the group of ions consisting of boron and helium, and which further includes implanting H+ ions; annealing to relax the strained SiGe layer, thereby forming a first relaxed SiGe layer; and completing the semiconductor device.
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Evans David R.
Hsu Sheng Teng
Maa Jer-Shen
Tweet Douglas J.
Nhu David
Sharp Laboratories of America, Inc
Varitz PC Robert D.
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