Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-03-09
2010-10-19
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C257S415000
Reexamination Certificate
active
07816166
ABSTRACT:
A method to form a MEMS structure is described. In an embodiment, a structure having a first release layer between a substrate and a member is provided. A second release layer is adjacent to a sidewall of the member. At least a portion of each of the first and the second release layers is then removed. In one embodiment, the member is formed by a damascene process. In another embodiment, the member is formed by a subtractive process. In a specific embodiment, the second release layer formed adjacent to a sidewall of the member has sub-lithographic dimensions.
REFERENCES:
patent: 4838088 (1989-06-01), Murakami
patent: 6846691 (2005-01-01), Hsu et al.
patent: 7023065 (2006-04-01), Ayazi et al.
patent: 7146016 (2006-12-01), Pedersen
patent: 2003/0124761 (2003-07-01), Baert et al.
patent: 2004/0209435 (2004-10-01), Partridge et al.
patent: 2005/0009233 (2005-01-01), Park et al.
patent: 2005/0019974 (2005-01-01), Lutz et al.
patent: 2005/0250236 (2005-11-01), Takeuchi et al.
patent: 2006/0108675 (2006-05-01), Colgan et al.
patent: 2006/0270238 (2006-11-01), Izumi et al.
patent: 2006/0273416 (2006-12-01), Ayazi et al.
patent: 2007/0108513 (2007-05-01), Rub et al.
patent: 2007/0111365 (2007-05-01), Tateishi et al.
patent: 2008/0054759 (2008-03-01), Ayazi et al.
Lund, Jennifer L. et al., “A Low Temperature Bi-CMOS Compatible Process for MEMS RF Resonators and Filters,” Solid-State Sensor, Actuator and Microsystems Workshop, Jun. 2-6, 2002, pp. 38-41.
Jahnes, C. V., et al., “Simultaneous Fabrication of RF MEMS Switches and Resonators Using Copper-Based CMOS Interconnect Manufacturing Methods,” IEEE, 2004, pp. 789-792.
Wang, Jing, et al., “1.156-GHZ Self-Aligned Vibrating Micromechanical Disk Resonator,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Dec. 2004, pp. 1607-1628, vol. 51, No. 12.
Choi Calvin
Garber Charles D
O'Keefe, Egan Peterman & Enders LLP
Silicon Labs SC, Inc.
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