Method to form a DRAM capacitor using low temperature...

Details Method to form a DRAM capacitor using low temperature... Method to form a DRAM capacitor using low temperature...

2000-11-20

2002-09-10

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S151000, C438S164000, C438S788000, C438S396000

Reexamination Certificate

active

06448133

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to semiconductor fabrication and particularly to a dielectric material formed from a reoxidized high dielectric constant material and a process to create same.
BACKGROUND OF THE INVENTION
Dielectric materials used in semiconductors are selected depending on the intended use. For example, in the dynamic random access memory (DRAM) device, storage cells require a storage capacitor as a means of storing a charge to represent data. It is usually therefore desirable to select a dielectric material that possesses a high dielectric constant in order to prevent charge leakage. This is even more desirable, as DRAM devices become more densely packed, to contain more bit storage capability per die than early generations.
Many capacitor dielectrics have been utilized in attempts to shrink capacitor size and still maintain sufficient charge storage capability. Some examples include, thin film nitrides, oxide
itride combinations or ferroelectric materials to name a few. However, each of these dielectric films possess limitations, thus forcing ongoing research to find the ideal capacitive dielectric film.
The present invention develops a very promising capacitive dielectric film by special reoxidation techniques which will come apparent to one skilled in the art from the following disclosure.
SUMMARY OF THE INVENTION
One embodiment of the present comprises a method for oxidizing a dielectric for semiconductor device fabrication, by subjecting the dielectric to an ozone ambient, wherein the ozone ambient is selected from the group consisting of an ambient containing an the presence of ultraviolet light and ozone gas, an ambient containing ozone gas or an ambient containing NF
3
/ozone gas mixture.
Another embodiment of the present invention comprises a method for forming a dielectric in a wafer cluster tool for semiconductor device fabrication by the steps of:
forming nitride adjacent a layer by rapid thermal nitridation;
subjecting the nitride to an ozone ambient, wherein the ozone ambient is selected from the group consisting of an ambient containing an the presence of ultraviolet light and ozone gas, an ambient containing ozone gas or an ambient containing an NF
3
/ozone gas mixture.


REFERENCES:
patent: 5322809 (1994-06-01), Moslehi
patent: 5434109 (1995-07-01), Geissler
patent: 5510158 (1996-04-01), Hiramoto
patent: 5523596 (1996-06-01), Ohi
patent: 5597754 (1997-01-01), Lou
patent: 5622607 (1997-04-01), Yamazaki et al.
patent: 5789762 (1998-08-01), Koyama et al.
patent: 5840600 (1998-11-01), Yamazaki et al.
patent: 5973911 (1999-10-01), Nishioka

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