Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-04-26
2000-12-26
Hardy, David
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438257, 438264, 438265, 438585, 438588, 438593, 438701, 438733, 257317, 257321, H01L 21336
Patent
active
061658456
ABSTRACT:
A method is provided to form a sharp poly tip to improve the speed of a split-gate flash memory. The sharp poly tip is provided in place of the conventional gate bird's beak (GBB) because the latter requires the forming of thick poly-oxide which is more and more difficult in the miniaturized circuits of the ultra scale integrated technology. Furthermore, it is well known that GBB encroaches under the gate edge in a split-gate flash and degrades the programmability of submicron memory cells. The sharp poly tip of the invention is provided by forming a tapered floating gate through a high pressure etch such that the tip of the upper edge of the floating gate under the poly oxide is sharper and more robust, and, therefore, less susceptible to damage during the manufacture of the cell. The invention is also directed to a semiconductor device fabricated by the disclosed method.
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Hsieh Chia-Ta
Kuo Di-Son
Lin Yai-Fen
Sung Hung-Cheng
Yeh Jack
Ackerman Stephen B.
Hardy David
Richards N. Drew
Saile George O.
Taiwan Semiconductor Manufacturing Company
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