Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-10-17
2006-10-17
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S640000, C257S649000, C257SE23144, C257SE23161, C257SE23163
Reexamination Certificate
active
07122878
ABSTRACT:
A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.
REFERENCES:
patent: 5206788 (1993-04-01), Larson et al.
patent: 5583068 (1996-12-01), Jones, Jr. et al.
patent: 5654222 (1997-08-01), Sandhu et al.
patent: 5770517 (1998-06-01), Gardner et al.
patent: 5879957 (1999-03-01), Joo
patent: 5903493 (1999-05-01), Lee
patent: 6025223 (2000-02-01), Park
patent: 6069051 (2000-05-01), Nguyen et al.
patent: 6144051 (2000-11-01), Nishimura et al.
patent: 6180976 (2001-01-01), Roy
patent: 6274435 (2001-08-01), Chen
patent: 6300682 (2001-10-01), Chen
patent: 6323099 (2001-11-01), Long et al.
patent: 6329234 (2001-12-01), Ma et al.
patent: 6338999 (2002-01-01), Hsue et al.
patent: 6344964 (2002-02-01), Adler
patent: 6429089 (2002-08-01), Matsuki
patent: 6452779 (2002-09-01), Adler et al.
patent: 6459562 (2002-10-01), KarRoy et al.
patent: 6461914 (2002-10-01), Roberts et al.
patent: 6504203 (2003-01-01), Gambino et al.
patent: 6509601 (2003-01-01), Lee et al.
patent: 6576526 (2003-06-01), Kai et al.
patent: 6583491 (2003-06-01), Huang et al.
patent: 6635498 (2003-10-01), Summerfelt et al.
patent: 6734079 (2004-05-01), Huang et al.
patent: 6803641 (2004-10-01), Papa Rao et al.
patent: 6853082 (2005-02-01), Chen et al.
patent: 6876028 (2005-04-01), Coolbaugh et al.
patent: 2001/0013614 (2001-08-01), Joshi et al.
patent: 2001/0019141 (2001-09-01), Takahashi
patent: 2002/0127792 (2002-09-01), Yoshitomi et al.
patent: 2002/0168831 (2002-11-01), Miyasaka et al.
patent: 2003/0008467 (2003-01-01), Kai et al.
patent: 2003/0042522 (2003-03-01), Mikawa et al.
patent: 2003/0211731 (2003-11-01), Kai et al.
patent: 2003/0232481 (2003-12-01), Huang et al.
patent: 2004/0087098 (2004-05-01), Ng et al.
patent: 2004/0155277 (2004-08-01), Koh
patent: 2004/0201057 (2004-10-01), Lien et al.
patent: 2005/0063138 (2005-03-01), Rost et al.
patent: 2005/0121744 (2005-06-01), Chang et al.
patent: 2005/0130369 (2005-06-01), Kim et al.
patent: 2005/0170583 (2005-08-01), Park
patent: 2005/0189577 (2005-09-01), Wang
patent: 2006/0071262 (2006-04-01), Wang
Wolf, Ph.D., Stanley, Richard N. Tauber, Ph.D., “Chemical Vapor Deposition of Amorphous and Polycrystalline Films,” Silicon Processing for the VLSI Era—vol. 1: Process Technology, Lattice Press, 1986, pp. 183-184.
Wolf, Ph.D., Stanley, Richard N. Tauber, Ph.D., “Chemical Vapor Deposition of Amorphous and Polycrystalline Films,” Silicon Processing for the VLSI Era—vol. 1: Process Technology, Lattice Press, 1986, pp. 187-188.
Chen Chun-Hon
Huang Chi-Feng
Lin Chih Hsien
Wong Shy Chy
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Toniae M.
Thomas Kayden Horstemeyer & Risley
Wilczewski Mary
LandOfFree
Method to fabricate high reliable metal capacitor within... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to fabricate high reliable metal capacitor within..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to fabricate high reliable metal capacitor within... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3691186