Method to fabricate dual metal CMOS devices

Details Method to fabricate dual metal CMOS devices Method to fabricate dual metal CMOS devices

2006-10-17

2006-10-17

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S592000, C257S369000, C257S407000, C257S412000, C257SE21002

Reexamination Certificate

active

07122414

ABSTRACT:
The present invention relates generally to barrier layers in transistor gate stacks in integrated circuits, and to processes for forming such gate stacks.

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