Method to define a crown shaped storage node structure, and an u

Details Method to define a crown shaped storage node structure, and an u Method to define a crown shaped storage node structure, and an u

1998-10-09

2000-01-11

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438970, H01L 218242

Patent

active

060135506

ABSTRACT:
A process for forming a crown shaped storage node structure, for a DRAM capacitor structure, has been developed. The process features the patterning of a top portion, of a storage node contact plug structure, after patterning of the crown shaped storage node structure, and after removal of a silicon oxide layer, used for the definition of the crown shaped storage node structure. The sequence of patterning steps allows mis-alignment between the crown shaped storage node structure, and the underlying storage node contact hole, to occur without vulnerability to insulator layers used to passivate the transfer gate transistors, of the DRAM cell. This process also features the use of a photoresist plug, used to protect a bottom shape, of the crown shaped storage node structure during the crown shaped storage node, and the storage node contact plug structure, patterning procedures.

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