Method to cure mobile ion contamination in semiconductor process

Details Method to cure mobile ion contamination in semiconductor process Method to cure mobile ion contamination in semiconductor process

1998-05-01

1999-08-24

Brown, Peter Toby

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438760, 438791, H01L 2131

Patent

active

059436026

ABSTRACT:
A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.

REFERENCES:
patent: 4422291 (1983-12-01), Clementi et al.
patent: 4740483 (1988-04-01), Tobin
patent: 4980307 (1990-12-01), Ito et al.
patent: 5043224 (1991-08-01), Tarrodine et al.
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5409858 (1995-04-01), Thakur et al.
patent: 5478765 (1995-12-01), Kwong et al.
patent: 5780364 (1998-07-01), Thakur

Affiliated with

Also associated with

Rating

Method to cure mobile ion contamination in semiconductor process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to cure mobile ion contamination in semiconductor process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to cure mobile ion contamination in semiconductor process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-476354