Method to create a depleted poly MOSFET

Details Method to create a depleted poly MOSFET Method to create a depleted poly MOSFET

1998-10-22

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438229, 438549, 438551, 438552, 257392, H01L 21336

Patent

active

061366560

ABSTRACT:
A structure and method for forming a semiconductor structure includes forming a plurality of device layers on a substrate (the device layers including a blocking layer having a thickness correlating to a magnitude of implant attenuation), removing the blocking layer from selected devices of the semiconductor, and implanting an impurity into the substrate, the device layers and partially through the blocking layer.

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