Method to control threshold voltage by modifying implant dosage

Details Method to control threshold voltage by modifying implant dosage Method to control threshold voltage by modifying implant dosage

1995-12-14

1998-04-14

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438291, 438525, 438529, 438531, 438944, 257392, H01L 218238

Patent

active

057390584

ABSTRACT:
A semiconductor fabrication method is provided for forming transistors upon a semiconductor substrate wherein the semiconductor substrate has first, second and third substrate regions. A single mask layer is formed over the semiconductor substrate. The single mask layer has a first mask portion covering the first substrate region, a second mask portion exposing the second substrate region, and a third mask portion partially covering the third substrate region. A first type impurity dopant is differentially introduced into the first, second and third substrate regions according to the single mask layer. First, second and third transistors are formed in the first, second and third substrate regions, respectively. The first and second transistors have differing conductivity types and the first and third transistors have the same conductivity type. The first and third transistors also have differing threshold voltages according to the differential introducing of the dopant. A first type impurity dopant is introduced into the third substrate region at a selectable angle and the amount of dopant introduced in the third substrate region varies according to the percentage of the third substrate region covered by the third mask portion and the selectable angle.

REFERENCES:
patent: 4257826 (1981-03-01), Matalone et al.
patent: 4329186 (1982-05-01), Kotecha et al.
patent: 4745083 (1988-05-01), Huie
patent: 4893164 (1990-01-01), Shirato
patent: 5075242 (1991-12-01), Nakahara
patent: 5091324 (1992-02-01), Hsu et al.
patent: 5210437 (1993-05-01), Sawada et al.
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5407849 (1995-04-01), Khambaty et al.
patent: 5416038 (1995-05-01), Hsue et al.
S. Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era" vol. I, p. 264, Aug. 1990.

Affiliated with

Also associated with

Rating

Method to control threshold voltage by modifying implant dosage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to control threshold voltage by modifying implant dosage , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to control threshold voltage by modifying implant dosage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-634229