Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-13
2010-10-12
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S590000, C438S718000, C257SE21198, C257SE21201
Reexamination Certificate
active
07811891
ABSTRACT:
A semiconductor process and apparatus uses a predetermined sequence of patterning and etching steps to etch a gate stack (30, 32) formed over a substrate (36), thereby forming an etched gate (33) having a vertical sidewall profile (35). By constructing the gate stack (30, 32) with a graded material composition of silicon-based layers, the composition of which is selected to counteract the etching tendencies of the predetermined sequence of patterning and etching steps, a more idealized vertical gate sidewall profile (35) may be obtained.
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Adetutu Olubunmi O.
Orlowski Marius K.
Stout Phillip J.
Cannatti Michael Rocco
Coleman W. David
Freescale Semiconductor Inc.
Hamilton & Terrile LLP
Scarlett Shaka
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