Method to control gate CD

Details Method to control gate CD Method to control gate CD

2007-11-06

2007-11-06

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S313000, C216S012000, C216S041000, C216S049000, C438S014000, C438S016000, C438S733000, C438S736000, C438S738000, C438S949000

Reissue Patent

active

10443924

ABSTRACT:
The invention is a process for reducing variations in CD from wafer to wafer. It begins by increasing all line widths in the original pattern data file by a fixed amount that is sufficient to ensure that all lines will be wider than the lowest acceptable CD value. Using a reticle generated from this modified data file, the pattern is formed in photoresist and the resulting CD value is determined. If this turns out be outside (above) the acceptable CD range, the amount of deviation from the ideal CD value is determined and fed into suitable software that calculates the control parameters (usually time) for an ashing routine. After ashing, the lines will have been reduced in width by the amount necessary to obtain the correct CD. A fringe benefit of this trimming process is that edge roughness of the photoresist lines is reduced and line feet are removed.

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BOYNTON, Terence, et al., “Gate CD Control for a 0.35 μm Logic Technology”, Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium, San Francisco, California, Oct. 6-8, 1997, pp. F-9-F12.
MONAHAN, Kevin M., et al., “A Systems Approach to Gate CD Control: Metrology, Throughput, and OEE”, Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium, San Francisco, California, Oct. 6-8, 1997, pp. B-53-B57.

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