Method to control device threshold of SOI MOSFET's

Details Method to control device threshold of SOI MOSFET's Method to control device threshold of SOI MOSFET's

2007-09-25

2007-09-25

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000

Reexamination Certificate

active

10965992

ABSTRACT:
A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided in which an implanted back-gate is formed into a Si-containing layer of an SOI wafer. The implanted back-gate thus formed is capable of controlling the threshold voltage of a polysilicon-containing front-gate which is formed over a portion of the implanted back-gate region. The implanted back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.

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