Method to build self-aligned NPN in advanced BiCMOS technology

Details Method to build self-aligned NPN in advanced BiCMOS technology Method to build self-aligned NPN in advanced BiCMOS technology

2007-09-04

2007-09-04

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C257S552000, C257S554000, C257S557000

Reexamination Certificate

active

10711486

ABSTRACT:
The present invention provides a method of forming a self-aligned heterobipolar transistor (HBT) device in a BiCMOS technology. The method includes forming a raised extrinsic base structure by using an epitaxial growth process in which the growth rate between single crystal silicon and polycrystalline silicon is different and by using a low temperature oxidation process such as a high-pressure oxidation (HIPOX) process to form a self-aligned emitter/extrinsic base HBT structure.

REFERENCES:
patent: 4808548 (1989-02-01), Thomas et al.
patent: 4985744 (1991-01-01), Spratt et al.
patent: 5059544 (1991-10-01), Burghartz et al.
patent: 6399993 (2002-06-01), Ohnishi et al.
patent: 6888221 (2005-05-01), Joseph et al.
patent: 2002/0052074 (2002-05-01), Houghton et al.
patent: 2002/0076874 (2002-06-01), Coolbaugh et al.
patent: 2003/0064555 (2003-04-01), Ahlgren et al.
patent: 2003/0201517 (2003-10-01), Dunn et al.

Affiliated with

Also associated with

Rating

Method to build self-aligned NPN in advanced BiCMOS technology does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to build self-aligned NPN in advanced BiCMOS technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to build self-aligned NPN in advanced BiCMOS technology will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3802301