Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-05
2006-12-05
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S301000
Reexamination Certificate
active
07144769
ABSTRACT:
A method of forming at least one deep trench structure having an increased trench depth is provided. The method includes providing at least one deep trench having sidewalls that extend to a common bottom wall in a surface of a substrate. Each deep trench has initial dimensions that are wider than targeted dimensions for the deep trenches. To reduce the initial dimensions to that of the targeted dimensions, an epitaxial silicon film is formed selectively or non-selectively on at least some portions of the sidewalls using a low-temperature ultra-high vacuum epitaxial silicon growth tehnique.
REFERENCES:
patent: 4843025 (1989-06-01), Morita
patent: 4980306 (1990-12-01), Shimbo
patent: 5308785 (1994-05-01), Comfort et al.
patent: 5677219 (1997-10-01), Maxure et al.
patent: 5933748 (1999-08-01), Chou et al.
patent: 5945704 (1999-08-01), Schrems et al.
patent: 6025225 (2000-02-01), Forbes et al.
patent: 6144054 (2000-11-01), Agahi et al.
patent: 6501149 (2002-12-01), Hong
patent: 0293134 (1988-11-01), None
R.S. Bennet, et al. Fabrication of Narrow elf-Aligned Trenches and Isolated N-type Silicon Region with Buried N+ Layer, IBM Disclosure Bulletin, vol. 34, No. 10A, 1992 (pp. 397-399).
Chan Kevin K.
Kulkarni Subhash B.
Mathad Gangadhara S.
Ranade Rajiv M.
International Business Machines - Corporation
Li, Esq. Todd M. C.
Scully , Scott, Murphy & Presser, P.C.
Vu David
LandOfFree
Method to achieve increased trench depth, independent of CD... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to achieve increased trench depth, independent of CD..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to achieve increased trench depth, independent of CD... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3685684