Method or forming self-aligned halo-isolated wells

Details Method or forming self-aligned halo-isolated wells Method or forming self-aligned halo-isolated wells

1997-05-30

1999-10-26

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438525, 438527, 438224, 438228, 365182, H01L 218238

Patent

active

059727454

ABSTRACT:
A method of forming a self-aligned halo-isolated well with a single mask is disclosed. First, a layer of resist is disposed over at least a portion of a substrate's surface. Then, an impurity of a first polarity type is implanted at an angle into the substrate through a gap in the layer of resist, thus forming a well having the impurity of the first polarity, which extends beneath the layer of resist. An impurity of a second polarity type is also implanted, using the same mask as previously used. The second implantation forms a well of the impurity of the second polarity disposed within the well of to impurity of the first polarity.

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