Method of wet etching an inorganic antireflection layer

Details Method of wet etching an inorganic antireflection layer Method of wet etching an inorganic antireflection layer

2006-02-21

2006-02-21

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S669000, C438S724000

Reexamination Certificate

active

07001838

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps of:patterning the inorganic anti-reflective layer by means of the resist mask,patterning the layer of silicon,removing the resist mask, andremoving the inorganic anti-reflective layer by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.

REFERENCES:
patent: 6121123 (2000-09-01), Lyons et al.
patent: 6200863 (2001-03-01), Xiang et al.
patent: 6585910 (2003-07-01), Kikuyama et al.

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