Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1996-11-08
1998-04-28
Beck, Shrive P.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427250, 4272553, B05D 512, C23C 1604, C23C 1618
Patent
active
057441928
ABSTRACT:
A method of blending water vapor with volatile Cu(hfac)TMVS (copper hexafluoroacetylacetonate trimethylvinylsilane) is provided which improves the deposition rate of Cu, without degrading the resistivity of the Cu deposited upon an integrated circuit surface. The method of the present invention uses a relatively small amount of water vapor, approximately 0.3 to 3% of the total pressure of the system in which chemical vapor deposition (CVD) Cu is applied. The method specifies the flow rates of the liquid precursor, carrier gas, and liquid water. The method also specifies the pressures of the vaporized precursor, vaporized precursor blend including carrier gas and water vapor. In addition, the temperatures of the vaporizers, chamber walls, and IC surfaces are disclosed. A Cu precursor blend is also provided comprising vaporized Cu(hfac)TMVS and water vapor. The ratio of water vapor pressure to vaporized precursor is approximately 0.5 to 5%. Further, an IC surface covered with Cu applied with a Cu precursor blend including vaporized Cu(hfac)TMVS and water vapor, with the above mentioned ratio of water vapor pressure to volatile Cu(hfac)TMVS pressure, is provided.
REFERENCES:
patent: 5322712 (1994-06-01), Norman et al.
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patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5429987 (1995-07-01), Allen
patent: 5441766 (1995-08-01), Choi et al.
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Article Entitled Chemical Vapor Deposition of Copper from (hfac)CuL(L = LTMS and 2-Butyne) in the Presence of Water, Methanol, and Dimethyl Ether printed in Chem. Mater. 1996, vol. 8,No. 5, pp. 1119-1127 Jain, A et al.
Article entitled "Chemical Vapor Desposition of Copper from CU.sup.+1 Precursors in the Presence of Water Vapor" published in the Appl. Phys. Letter 63 (20), Nov. 15, 1993, pp. 2842-2844 Gelatos, A.V., et al.
Article entitled "CHemical Addiives for Improved Copper CVD Processing Using (hfac) Cu(TMVS)" 1995 Material Research Society, Conference Proceedings ULSI-X, 1995, pp. 79-86 Hochberg, Arthur et al.
Charneski Lawrence J.
Hsu Sheng Teng
Kobayashi Masato
Nguyen Tue
Senzaki Yoshihide
Beck Shrive P.
Chen Bret
Maliszewski Gerald W.
Ripma David C.
Sharp Kabushiki Kaisha
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